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2N5655G - Plastic NPN Silicon High-Voltage Power Transistors

Key Features

  • Excellent DC Current Gain.
  • High Current.
  • Gain.
  • Bandwidth Product.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number 2N5655G
Manufacturer onsemi
File Size 115.12 KB
Description Plastic NPN Silicon High-Voltage Power Transistors
Datasheet download datasheet 2N5655G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. Features • Excellent DC Current Gain • High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N5655G 2N5657G VCEO 250 350 Vdc Collector−Base Voltage 2N5655G 2N5657G VCB Vdc 275 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 6.0 Vdc IC 0.5 Adc ICM 1.0 Adc IB 1.0 Adc PD 20 W 0.