2N5657G - Plastic NPN Silicon High-Voltage Power Transistors

onsemi

Download the 2N5657G datasheet PDF. This datasheet also covers the 2N5655G variant, as both devices belong to the same plastic npn silicon high-voltage power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

Excellent DC Current Gain.
High Current.
Gain.
Bandwidth Product.
These Devices are Pb.
Free and are RoHS Compliant.

📥 Download Datasheet

2N5657G plastic npn silicon high-voltage power transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5655G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5657G
Manufacturer	onsemi
File Size	115.12 KB
Description	Plastic NPN Silicon High-Voltage Power Transistors
Datasheet	2N5657G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N5657	SILICON NPN TRANSISTOR	STMicroelectronics
2N5657	POWER TRANSISTORS	Motorola
2N5657	(2N5655 - 2N5657) Silicon NPN Power Transistors	SavantIC
2N5653	n-channel JFET	Siliconix
2N5653	SWITCHING JFET	Motorola

Other Datasheets by onsemi

Part Number	Description
2N5657	POWER TRANSISTORS
2N5655	POWER TRANSISTORS
2N5655G	Plastic NPN Silicon High-Voltage Power Transistors
2N5631	POWER TRANSISTORS
2N5638	JFET Chopper Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. Features • Excellent DC Current Gain • High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N5655G 2N5657G VCEO 250 350 Vdc Collector−Base Voltage 2N5655G 2N5657G VCB Vdc 275 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 6.0 Vdc IC 0.5 Adc ICM 1.0 Adc IB 1.0 Adc PD 20 W 0.