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2N5657 Datasheet PDF

STMicroelectronics 2N5657

The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.

2N5657 Specifications

  • Package : TO-225
  • Polarity : NPN
  • Max Collector Current : 500mA
  • Frequency : 10MHz
  • Terminals : 3
  • Collector Base Voltage : 375V
  • Collector Emitter Voltage : 350V
  • Emitter Base Voltage : 6V
  • Collector Emitter Saturation Voltage : 10V
  • Max Power Dissipation : 20W
  • Max Operating Temp : 140°C
  • Min Operating Temp : -65°C
Source: Octopart
Part No. 2N5657
Datasheet 2N5657 Download
Manufacturer
STMicroelectronics
Description SILICON NPN TRANSISTOR
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2N5657 datasheet page 1 preview

DESCRIPTION

3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj June 1997 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C St orage Temperature Max. Operating Junction Temperature o Value 375 350 6 0.5 1 0.25 20 -65 to 150 150 Uni t V V V A A A W o o C C 1/5 2N5657 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 6.25 o C/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEV I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 375 V V CE = 350 V V CE = 250 V V CE = 250 V V EB = 6 V I C = 1 mA I C = 100 mA I C = 0.1 A I C = 0.25 A I C = 0.5 A I C = 0.1 A IC IC IC IC = = = = 50 mA 0.1 A 0.25 A...
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