| Part Number | 2N5655 |
|---|---|
| Manufacturer | onsemi |
| Overview |
2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor
These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−v.
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* Excellent DC Current Gain * * * hFE = 30 *250 @ IC = 100 mAdc Current *Gain * Bandwidth Product * fT = 10 MHz (Min) @ IC = 50 mAdc Pb *Free Packages are Available* 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 *350 VOLTS, 20 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ. |
2N5655 Datasheet
The 2N5655 is a POWER TRANSISTORS.
| Part Number | 2N5655 |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5655/D
Plastic NPN Silicon High-Voltage Power Transistor
2N5655 2N5656 2N5657
0.5 AMPERE POWER TRANSISTORS NPN S.
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* Excellent DC Current Gain * hFE = 30 * 250 @ IC = 100 mAdc * Current *Gain * Bandwidth Product * fT = 10 MHz (Min) @ IC = 50 mAdc MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5656 300 325 6.0 0.5 1.0 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter. |
| Part Number | 2N5655 |
|---|---|
| Description | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN 1 2 . duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter . |
| Part Number | 2N5655 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE= 30-250@IC= 0.1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliabl. k isc Silicon NPN Power Transistors 2N5655 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 50mH 250 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 250 . |