
	ON Semiconductor Electronic Components Datasheet

2N6284 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6284 (NPN); 2N6286,

2N6287 (PNP)

Preferred Device

Darlington Complementary

Silicon Power Transistors

These packages are designed for general−purpose amplifier and

low−frequency switching applications.

Features

• High DC Current Gain @ IC = 10 Adc −

hFE = 2400 (Typ) − 2N6284

= 4000 (Typ) − 2N6287

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N6286

VCEO

Vdc

2N6284/87

100

Collector−Base Voltage

VCB

Vdc

2N6286

2N6284/87

100

Emitter−Base Voltage

Collector Current − Continuous

Peak

VEB 5.0 Vdc

20 Adc

Base Current

Total Power Dissipation @ TC = 25°C

Derate above 25°C

0.5

160

0.915

Adc

W/°C

Operating and Storage Temperature

Range

TJ, Tstg − 65 to + 200

°C

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case RqJC

1.09 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

September, 2008 − Rev. 4

http://onsemi.com

20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

100 VOLTS, 160 WATTS

COLLECTOR

CASE

BASE

EMITTER 2

MARKING DIAGRAM

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N628xG

AYYWW

MEX

2N628x

MEX

= Device Code

x = 4, 6 or 7

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

ORDERING INFORMATION

Device

Package

Shipping

2N6284

2N6284G

TO−3

(Pb−Free)

100 Units/Tray

2N6286

2N6286G

TO−3

(Pb−Free)

100 Units/Tray

2N6287

2N6287G

TO−3

(Pb−Free)

100 Units/Tray

Publication Order Number:

2N6284/D


	ON Semiconductor Electronic Components Datasheet

2N6284 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6284 (NPN); 2N6286, 2N6287 (PNP)

160

140

120

100

0 25 50 75 100 125 150 175 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)

2N6286

2N6284, 2N6287

VCEO(sus)

100

Vdc

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEO

ICEX

mAdc

− 1.0

mAdc

− 0.5

− 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)

IEBO

− 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 20 Adc, VCE = 3.0 Vdc)

hFE −

750 18,000

100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =10Adc,IB =40mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)

VCE(sat)

−

Vdc

2.0

3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage

(IC = 10 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)

VBE(on) − 2.8 Vdc

VBE(sat) − 4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common Emitter Small−Signal Short−Circuit

Forward Current Transfer Ratio

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

|hfe|

2N6284

2N6286, 2N6287

Cob

4.0 − MHz

− 400

− 600

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2. Indicates JEDEC Registered Data.

hfe 300 − −

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

http://onsemi.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

2N6284 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6284 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Similar Datasheet

Part Number Start With