2N6286 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

onsemi

Key Features

High DC Current Gain @ IC = 10 Adc.
hFE = 2400 (Typ).
2N6284 = 4000 (Typ).
2N6287.
Collector.
Emitter Sustaining Voltage.
VCEO(sus) = 100 Vdc (Min).
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
Pb.
Free Packages are Available.

2N6286 darlington complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2N6286
Manufacturer	onsemi
File Size	132.23 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	2N6286 Datasheet

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Other Datasheets by onsemi

Part Number	Description
2N6282	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6283	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6284	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6285	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6287	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6286 VCEO 80 Vdc 2N6284/87 100 Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 Emitter−Base Voltage Collector Current − Continuous Peak VEB 5.