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2N6286 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Datasheet Summary

Features

  • High DC Current Gain @ IC = 10 Adc.
  • hFE = 2400 (Typ).
  • 2N6284 = 4000 (Typ).
  • 2N6287.
  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 100 Vdc (Min).
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors.
  • Pb.
  • Free Packages are Available.

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Datasheet Details

Part number 2N6286
Manufacturer ON Semiconductor
File Size 132.23 KB
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet 2N6286 Datasheet
Additional preview pages of the 2N6286 datasheet.

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Full PDF Text Transcription

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2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6286 VCEO 80 Vdc 2N6284/87 100 Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 Emitter−Base Voltage Collector Current − Continuous Peak VEB 5.
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