DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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High-Power NPN Silicon Transistors
. . . designed for use in industrial–military power amplifier and switching circuit applications.
• High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N6275 = 150 Vdc (Min) — 2N6277
• High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc = 10 (Min) @ IC = 50 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc
tr = 0.35 ms (Max) ts = 0.8 ms (Max) tf = 0.
2N6277 Datasheet
