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2N 6278 thru 2N 6281 (SILICON)
HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifier and switching circuit applications.
• High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279
= 140 Vdc (Min) - 2N6280
= 150 Vdc (Min) - 2N6281
• High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc
• Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max)
ts = 0.8 Ils (Max) tf = 0.
2N6278 Datasheet
