2N6279 - HIGH-POWER NPN SILICON TRANSISTORS

Download the 2N6279 datasheet PDF. This datasheet also covers the 2N6278 variant, as both devices belong to the same high-power npn silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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2N6279 high-power npn silicon transistors by Unknown Manufacturer - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6278-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6279
Manufacturer	Unknown Manufacturer
File Size	325.68 KB
Description	HIGH-POWER NPN SILICON TRANSISTORS
Datasheet	2N6279 Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number	Description
2N6278	HIGH-POWER NPN SILICON TRANSISTORS
2N6246	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
2N6247	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
2N6248	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
2N6256	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.