2N6338 Datasheet | onsemi

2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial- military power amplifier and switching circuit applications. - High Collector- Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 - High DC Current Gain - h FE = 30 - 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc - Low Collector- Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc - Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) - Pb- Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ - MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 2N6341 25 50 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc Adc Adc W...