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2SA2012 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of MBIT processes.
  • Large current capacity.
  • Low collector to emitter saturation voltage.
  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit.

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Datasheet Details

Part number 2SA2012
Manufacturer ON Semiconductor
File Size 293.97 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2012 Datasheet
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Full PDF Text Transcription

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Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit --30 V --30 V --5 V --5 A --8 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device.
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