Datasheet4U Logo Datasheet4U.com

2SA2012 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Cu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA2012 Bipolar Transistor ON Semiconductor
2SA201 PNP transistor ETC
2SA2010 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor
2SA2016 PNP TRANSISTOR UTC
2SA2016 Bipolar Transistor ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA2011 PNP/NPN Epitaxial Planar Silicon Transistors
2SA2013 PNP/NPN Epitaxial Planar Silicon Transistors
2SA2014 PNP/NPN Epitaxial Planar Silicon Transistors
2SA2015 PNP/NPN Epitaxial Planar Silicon Transistors
2SA2016 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2012/2SC5565] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.