2SA2012 - Bipolar Transistor

onsemi

Key Features

Adoption of MBIT processes.
Large current capacity.
Low collector to emitter saturation voltage.
Ultrasmall-sized package permitting applied sets to be made small and slim.
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit.

2SA2012 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SA2012
Manufacturer	onsemi
File Size	293.97 KB
Description	Bipolar Transistor
Datasheet	2SA2012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, ﬂash Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit --30 V --30 V --5 V --5 A --8 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device.