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2SA2016 - Bipolar Transistor

Features

  • Adoption of FBET and MBIT processes.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilitales miniaturization in end products.
  • High allowable power dissipation ( )2SA2016 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage VCBO VCES VCEO VEBO P.

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Datasheet preview – 2SA2016

Datasheet Details

Part number 2SA2016
Manufacturer onsemi
File Size 232.23 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2016 Datasheet
Additional preview pages of the 2SA2016 datasheet.

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Full PDF Text Transcription

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Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation ( )2SA2016 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage VCBO VCES VCEO VEBO Package Dimensions unit : mm (typ) 7008B-003 Top View 4.5 1.6 2SA2016-TD-E 2SC5569-TD-E 1.
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