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  ON Semiconductor Electronic Components Datasheet  

2SA2016 Datasheet

Bipolar Transistor

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Ordering number : EN6309D
2SA2016/2SC5569
Bipolar Transistor
(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Applicaitons
Relay drivers, lamp drivers, motor drivers, ash
Features
Adoption of FBET and MBIT processes
Large current capacity
Low collector-to-emitter saturation voltage
High-speed switching
Ultrasmall package facilitales miniaturization in end products
High allowable power dissipation
( )2SA2016
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VCBO
VCES
VCEO
VEBO
Package Dimensions
unit : mm (typ)
7008B-003
Top View
4.5
1.6
2SA2016-TD-E
2SC5569-TD-E
1.5
Conditions
Ratings
(-50)100
(-50)100
(--)50
(--)6
Unit
V
V
V
V
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
0.4
0.5
2
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Marking
2SA2016
2SC5569
Electrical Connection
22
11
3
2SA2016
3
2SC5569
Semiconductor Components Industries, LLC, 2013
September, 2013
13013 TKIM/72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259 No.6309-1/8


  ON Semiconductor Electronic Components Datasheet  

2SA2016 Datasheet

Bipolar Transistor

No Preview Available !

2SA2016 / 2SC5569
Continued from preceding page.
Parameter
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IC
ICP
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Tc=25°C
Ratings
(--)7
(--)10
(--)1.2
1.3
3.5
150
--55 to +150
Unit
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
IC=(--)3.5A, IB=(--)175mA
IC=(--)2A, IB=(--)40mA
IC=(--)2A, IB=(--)40mA
IC=(--)10μA, IE=0A
IC=(--)100μA, RBE=0Ω
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
min
200
(--50)100
(--50)100
(--)50
(--)6
Ratings
typ
(290)330
(50)28
(--230)160
(--240)110
(--)0.83
(40)30
(225)420
25
max
(--)0.1
(--)0.1
560
(--390)240
(--400)170
(--)1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω
+
100μF
+
470μF
VBE= --5V
VCC=25V
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
Ordering Information
Device
2SA2016-TD-E
2SC5569-TD-E
Package
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
No.6309-2/8


Part Number 2SA2016
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 8 Pages
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