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2SA2016 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET and MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilitales miniaturization in end products.
  • High allowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.25max Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector.

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2SA2011 PNP/NPN Epitaxial Planar Silicon Transistors
2SA2012 PNP/NPN Epitaxial Planar Silicon Transistors
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitales miniaturization in end products. · High allowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.