2SA2016 Key Features
- Adoption of FBET and MBIT processes
- High current capacitance
- Low collector-to-emitter saturation voltage
- High-speed switching
- Ultrasmall package facilitales miniaturization in end products
- High allowable power dissipation
- Part: 2SA2016
- Description: PNP/NPN Epitaxial Planar Silicon Transistors
- Manufacturer: SANYO
- Size: 50.27 KB
Other 2SA2016 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2SA2016 | PNP TRANSISTOR |
onsemi |
2SA2016 | Bipolar Transistor |