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A2016 - 2SA2016

Key Features

  • Adoption of FBET and MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilitales miniaturization in end products.
  • High allowable power dissipation. Specifications ( ) : 2SA2016 unit:mm 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 1.0 2.5 4.25max 32 0.5 0.4 1.5 3.0 0.75 1 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter.

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A2015 2SA2015
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitales miniaturization in end products. · High allowable power dissipation. Specifications ( ) : 2SA2016 unit:mm 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 1.0 2.5 4.25max 32 0.5 0.4 1.5 3.0 0.75 1 0.