A2017 - Power Transistor

ROHM

Key Features

1) Low VCE(sat). (Typ.
0.3V at IC/IB =.
2 /.
0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -5 -4 -6 30 150 -55~+150 Unit.

A2017 power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	A2017
Manufacturer	ROHM
File Size	44.03 KB
Description	Power Transistor
Datasheet	A2017 Datasheet

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Transistors Power Transistor (−80V, −4A) 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.