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2SA2018F - PNP Transistor

Key Features

  • High Collector Current Low VCE(sat) - VCE(sat)İ-250mV at IC = -200mA/IB=-10mA.

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Elektronische Bauelemente 2SA2018F PNP Silicon General Purpose Transistor RoHS Compliant Product FEATURES High Collector Current Low VCE(sat) - VCE(sat)İ-250mV at IC = -200mA/IB=-10mA MARKING CODE BW A L S 3 2 Top View 1 B 3. Collector 2. Base 1. Emitter G H D C J K SOT-523 Dim Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -15 -12 -6 -0.5 0.