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2SA2018 - PNP Transistors

Key Features

  • s.
  • A collector current is large.
  • Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 +0.15 1.6 -0.15 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 0.55 (REF. ) 0.36±0.1 U nit: m m 0.15±0.05 1. Base 2. Emitter 3. Collecter 0.8±0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base Voltage.

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SMD Type Transistors PNP Transistors 2SA2018 ■ Features ● A collector current is large. ● Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 +0.15 1.6 -0.15 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 0.55 (REF.) 0.36±0.1 U nit: m m 0.15±0.05 1. Base 2. Emitter 3. Collecter 0.8±0.