Kexin Electronics 2SA2018
PNP Transistors
FEATURES
● A collector current is large.● Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 +0.15 1.6 -0.15 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 0.55 (REF.) 0.36±0.1 U nit: m m 0.15±0.05 1. Base 2. Emitter 3. Collecter 0.8±0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -500 mA Collector Current - Pulse ICP -1 A Collector Power Dissipation PC 150 mW Junction Temperature Storage Temperature range TJ 150 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition...