MLSM 2SA2018
PNP Transistor
FEATURES
● A collector current is large.● Low VCE(sat). VCE(sat)≤250mV at IC =-200mA / IB =-10mA 2SA2018 Transistor (PNP) C BW B E Marking and pin assignment SOT-523 top view Schematic diagram
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operation Junction and Storage Temperature Range Value Unit -15 V -12 V -6 V -0.5 A 0.15 W -55~+150 °C Ordering Information (Example) Type Package Marking Minimum Package(pcs) Inner Box Quantity(pcs) Outer Carton Quantity(pcs) Delivery Mode 2SA2018 SOT-523 BW 3,000 45,000 180,000 7"reel Copyright©MLS Microelectronics Co., Ltd Rev 1.0 Page 1 Total 4 2SA2018 Transistor (PNP)ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE VCE(sat) fT Cob Collector-base breakdown voltage IC=-10μA,IE=0 Collector-emitter breakdow...