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Bipolar Transistor
(−)50 V, (−)8 A, Low VCE(sat), (PNP)NPN Single TP/TP−FA
2SA2040, 2SC5707
Features
• Adoption of FBET and MBIT Processes • Low Collector−to−emitter Saturation Voltage • Large Current Capacitance • High−speed Switching • High Allowable Power Dissipation • These are Pb−Free Devices
Applications
• DC / DC Converter, Relay Drivers, Lamp Drivers,
Motor Drivers, Flash
Specifications ( ): 2SA2040
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol Conditions Ratings Unit
Collector−to−Base Voltage
VCBO
(−50)100 V
Collector−to−Emitter Voltage VCES
(−50)100 V
VCEO
(−)50
V
Emitter to Base Voltage
VEBO
(−)6
V
Collector Current
IC
(−)8
A
Collector Current (Pulse)
ICP
(−)11
A
Base Current
IB
(−)2
A
Collector Dissipation
PC
1.