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  ON Semiconductor Electronic Components Datasheet  

2SA2112 Datasheet

Bipolar Transistor

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Ordering number : EN7379A
2SA2112
Bipolar Transistor
-50V, -3A, Low VCE(sat), PNP Single NMP
http://onsemi.com
Applicaitons
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes
Features
Adoption of MBIT process
Low collector-to-emitter saturation voltage
Large current capacity
High-speed switching
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature
Tstg
Conditions
Ratings
--50
--50
--50
--6
--3
--6
--600
1
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9 1.45 1.05 2SA2112-AN
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping)) Electrical Connection
0.6
0.5
0.9
A2112
LOT No.
2
3
1
12
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 3 : Base
NMP(Taping)
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM TC-00002806/N2503 TSIM TA-3749 No.7379-1/7


  ON Semiconductor Electronic Components Datasheet  

2SA2112 Datasheet

Bipolar Transistor

No Preview Available !

2SA2112
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--2A, IB=--100mA
IC=--2A, IB=--100mA
IC=--10μA, IE=0A
IC=--100μA, RBE=0A
IC=--1mA, RBE=
IE=--10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
IB2
IB1
INPUT VR RB
OUTPUT
RL
50Ω +
+
100μF
470μF
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --1A
Ordering Information
Device
2SA2112-AN
Package
NMP(Taping)
Shipping
2,500pcs./box
Ratings
min typ
200
390
24
--135
--260
--0.88
--50
--50
--50
--6
30
230
18
max
--1
--1
560
--270
--700
--1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
memo
Pb Free
No.7379-2/7


Part Number 2SA2112
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 7 Pages
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