2SC3649 Description
DATA SHEET .onsemi. Bipolar Transistor (−)160 V, (−)1.5 A, Low VCE(sat), (PNP) NPN Single PCP 2SA1419, 2SC3649 12 3 SOT−89 / PCP−1 CASE 419AU 1. Base 2. Collector.
2SC3649 Key Features
- Adoption of FBET, MBIT Processes
- High Breakdown Voltage and Large Current Capacity
- Ultrasmall Size Making it Easy to Provide High-density, Small-sized