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2SC5227A - RF Transistor

Features

  • Low-noise : NF=1.0dB typ (f=1GHz).
  • High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
  • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses excee.

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Datasheet Details

Part number 2SC5227A
Manufacturer onsemi
File Size 237.37 KB
Description RF Transistor
Datasheet download datasheet 2SC5227A Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1063A 2SC5227A RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP http://onsemi.com Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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