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2SC5347A - RF Transistor

Features

  • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : ⏐S21e⏐2=8dB typ (f=1GHz) : NF=1.8dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 12 2 150 1.3 150.

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Datasheet Details

Part number 2SC5347A
Manufacturer onsemi
File Size 209.46 KB
Description RF Transistor
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Full PDF Text Transcription

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Ordering number : ENA1087A 2SC5347A RF Transistor 12V, 150mA, fT=4.7GHz, NPN Single PCP http://onsemi.com Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : ⏐S21e⏐2=8dB typ (f=1GHz) : NF=1.8dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 12 2 150 1.3 150 --55 to +150 Unit V V V mA W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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