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2SC5415A - RF Transistor

Features

  • High gain : ⏐S21e⏐2=9dB typ (f=1GHz).
  • High cut-off frequency : fT=6.7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 100 800 150 --55 to +150 Unit V V V mA mW °C °C Stresses.

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Datasheet Details

Part number 2SC5415A
Manufacturer onsemi
File Size 193.07 KB
Description RF Transistor
Datasheet download datasheet 2SC5415A Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1080A 2SC5415A RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP http://onsemi.com Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 100 800 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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