* Adoption of FBET, MBIT processes.
* Large current capacity.
* Low collector-to-emitter saturation voltage.
* Fast switching time. Package Dimensions unit:mm 2003B [2SB1229/2SD1835] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SB1229 Specifications Absolute Maximum Ra
2SD1835
97.47 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number : ENN2158A 2SB1229/2SD1835 PNP/NPN Epitaxial Planar Silicon Transistors Driver Applications Applications Voltage regulators, r.
📁 Related Datasheet
2SD1830 PNP/NPN Transistors (Sanyo Semicon Device)
2SD1830 NPN Transistor (INCHANGE)
2SD1830 SILICON POWER TRANSISTOR (SavantIC)
2SD1832 Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
2SD1833 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SD1833 Silicon NPN Power Transistor (INCHANGE)
2SD1834 MEDIUM POWER TRANSISTOR (Rohm)
2SD1835 PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SD1838 NPN Triple Diffused Planar Type Transistors (Sanyo Semicon Device)
2SD180 Silicon NPN Power Transistor (Inchange Semiconductor)
