2SK536
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Source ON Resistance
V(BR)DS
IGSS
IDSS
IGS(off)
| yfs |
Ciss
Coss
Crss
RDS(on)
Conditions
ID=10μA, VGS=0V
VGS=10V, VDS=0V
VDS=20V, VGS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VGS=10V, ID=10mA
min
50
Ratings
typ
0.01
0.3 0.9
25 40
15
6
0.5
20
max
10
1
1.5
Unit
V
nA
μA
V
mS
pF
pF
pF
Ω
160
140
120
100
80
60
40
20
00
2
100
7
5
3
2
ID -- VDS
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
2 4 6 8 10 12 14
Drain to S⏐ouyrfcse⏐Vol-t-ageI,DVDS -- V ITR00795
VDS=10V
10
7
5
37 1.0
50
2 3 5 7 10 2 3 5 7 100
DRraDinSC(uornre)nt,--ID
-- mA
VGS
23 5
ITR00797
ID=10mA
40
30
20
10
00 2 4 6 8 10 12 14 16
Gate to Source Voltage, VGS -- V ITR00799
ID -- VGS
160
VDS=10V
140
120
100
80
60
40
20
00 2 4 6 8 10
60 Gate to⏐Soyufrsc⏐e Vo--ltagVeG, VSGS -- V ITR00796
50
V
DS=10V
3V
40
30
1V
20
10
00.6 1.0 1.4 1.8 2.2 2.6 3.0
Gate to
Ciss,
SCoourscse ,VoCltargses, V-G-S
-- V
VDS
ITR00798
20
18
16 Ciss
14
12
10
8
6 Coss
4
2
Crss
00 2 4 6 8 10 12 14 16
Drain to Source Voltage, VDS -- V ITR00800
No.2550-2/4
