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  ON Semiconductor Electronic Components Datasheet  

2SK536 Datasheet

N-Channel MOSFET

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Ordering number : EN2550B
2SK536
N-Channel MOSFET
50V, 100mA, Single CP
http://onsemi.com
Features
Large | yfs |
Enhancement type
Low ON-state resistance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current(Pulse)
Allowable Power Dissipation
Channel Temperature
VDS
VGS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
Ratings
50
±12
100
300
200
125
--55 to +125
Unit
V
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-010
Ordering & Package Information
Device
Package
Shipping
2SK536-TB-E
CP
SC-59, TO-236, SOT-23, TO-236AB
3,000pcs./reel
memo
Pb-Free
2.9
3
0.1 2SK536-TB-E Packing Type: TB
Marking
1
0.95
2
0.4
1 : Gate
2 : Drain
3 : Source
CP
TB
Electrical Connection
2
1
BJ
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM/52899TH (KT)/4237TA, TS No.2550-1/4


  ON Semiconductor Electronic Components Datasheet  

2SK536 Datasheet

N-Channel MOSFET

No Preview Available !

2SK536
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Source ON Resistance
V(BR)DS
IGSS
IDSS
IGS(off)
| yfs |
Ciss
Coss
Crss
RDS(on)
Conditions
ID=10μA, VGS=0V
VGS=10V, VDS=0V
VDS=20V, VGS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VGS=10V, ID=10mA
min
50
Ratings
typ
0.01
0.3 0.9
25 40
15
6
0.5
20
max
10
1
1.5
Unit
V
nA
μA
V
mS
pF
pF
pF
Ω
160
140
120
100
80
60
40
20
00
2
100
7
5
3
2
ID -- VDS
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
2 4 6 8 10 12 14
Drain to SouyrfcseVol-t-ageI,DVDS -- V ITR00795
VDS=10V
10
7
5
37 1.0
50
2 3 5 7 10 2 3 5 7 100
DRraDinSC(uornre)nt,--ID
-- mA
VGS
23 5
ITR00797
ID=10mA
40
30
20
10
00 2 4 6 8 10 12 14 16
Gate to Source Voltage, VGS -- V ITR00799
ID -- VGS
160
VDS=10V
140
120
100
80
60
40
20
00 2 4 6 8 10
60 Gate toSoyufrsce Vo--ltagVeG, VSGS -- V ITR00796
50
V
DS=10V
3V
40
30
1V
20
10
00.6 1.0 1.4 1.8 2.2 2.6 3.0
Gate to
Ciss,
SCoourscse ,VoCltargses, V-G-S
-- V
VDS
ITR00798
20
18
16 Ciss
14
12
10
8
6 Coss
4
2
Crss
00 2 4 6 8 10 12 14 16
Drain to Source Voltage, VDS -- V ITR00800
No.2550-2/4


Part Number 2SK536
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 4 Pages
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