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2SK536 - N-Channel MOSFET

Key Features

  • Large yfs.
  • Enhancement type.
  • Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Dra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features · Large yfs. · Enhancement type. · Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.