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2SK536 - N-Channel MOSFET

Key Features

  • Large | yfs |.
  • Enhancement type.
  • Low ON-state resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature VDS VGS ID IDP PD Tch Storage Temperature Tstg Conditions Ratings 50 ±12 100 300 200 125 --55 to +125 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are st.

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Datasheet Details

Part number 2SK536
Manufacturer onsemi
File Size 114.19 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK536 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2550B 2SK536 N-Channel MOSFET 50V, 100mA, Single CP http://onsemi.com Features • Large | yfs | • Enhancement type • Low ON-state resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature VDS VGS ID IDP PD Tch Storage Temperature Tstg Conditions Ratings 50 ±12 100 300 200 125 --55 to +125 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.