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  ON Semiconductor Electronic Components Datasheet  

30C02MH Datasheet

Bipolar Transistor

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Ordering number : EN7364B
30C02MH
Bipolar Transistor
30V, 0.7A, Low VCE(sat) NPN Single MCPH3
http://onsemi.com
Applications
Low-frequency Amplier, high-speed switching, small motor drive
Features
Large current capacity
Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (600mm2×0.8mm)
Ratings
40
30
5
700
1.4
600
150
-55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-004
30C02MH-TL-E
2.0 0.15 30C02MH-TL-H
3
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
CL
12
0.65 0.3
TL
Electrical Connection
3
1 : Base
2 : Emitter
3 : Collector
MCPH3
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141 No.7364-1/6


  ON Semiconductor Electronic Components Datasheet  

30C02MH Datasheet

Bipolar Transistor

No Preview Available !

30C02MH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C. 1%
INPUT
VR
IB1
IB2
RB
50Ω
+
220μF
VBE= --5V
IC=20IB1= --20IB2=300mA
OUTPUT
RL
+
470μF
VCC=12V
Ordering Information
Device
30C02MH-TL-E
30C02MH-TL-H
Package
MCPH3
MCPH3
Shipping
3,000pcs./reel
3,000pcs./reel
Ratings
min typ
300
540
3.3
85
0.9
40
30
5
35
255
40
max
100
100
800
190
1.2
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
memo
Pb Free
Pb Free and Halogen Free
700 IC -- VCE
600
10mA
7mA
5mA
500 3mA
2mA
400
1mA
300
200 400μA
200μA
100
0 IB=0A
0 100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05082
IC -- VBE
800
VCE=2V
700
600
500
400
300
200
100
0
0
0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE -- V IT05083
No.7364-2/6


Part Number 30C02MH
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 6 Pages
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