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30C02MH - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7364A 30C02MH SANYO Semiconductors DATA SHEET 30C02MH NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive. Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron).