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30C02CH - Bipolar Transistor

Key Features

  • Large current capacity.
  • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ. =330mΩ[IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO.

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Datasheet Details

Part number 30C02CH
Manufacturer onsemi
File Size 583.91 KB
Description Bipolar Transistor
Datasheet download datasheet 30C02CH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7363A 30C02CH Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single CPH3 http://onsemi.com Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Mounted on a ceramic board (600mm2×0.8mm) Ratings 40 30 5 700 1.