40N60FL
40N60FL is IGBT manufactured by onsemi.
features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5 ms Short- Circuit Capability
- These are Pb- Free Devices
Typical Applications
- Solar Inverters
- Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES
Pulsed collector current, Tpulse limited by TJmax
Diode Forward Current @ TC = 25°C @ TC = 100°C
Diode Pulsed Current Tpulse Limited by TJmax
Short- circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C
Gate- emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010)
Power Dissipation @ TC = 25°C @ TC = 100°C
A t SC
5 ms
$20
$30
Operating junction temperature...
