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  ON Semiconductor Electronic Components Datasheet  

40N60FL Datasheet

IGBT

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NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Solar Inverters
Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
600
V
IC
A
80
40
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 300 V,
TJ +150°C
Gateemitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM
160
A
IF
A
80
40
IFM
160
A
tSC
5
ms
VGE
$20
V
$30
PD
W
257
102
Operating junction temperature
range
TJ
55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 600 V
VCEsat = 1.85 V
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60FL
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbFree Package
ORDERING INFORMATION
Device
Package
NGTB40N60FLWG TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
1
July, 2013 Rev. 0
Publication Order Number:
NGTB40N60FLW/D


  ON Semiconductor Electronic Components Datasheet  

40N60FL Datasheet

IGBT

No Preview Available !

NGTB40N60FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.470
1.06
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
V(BR)CES
600
V
Collectoremitter saturation voltage
VGE = 15 V, IC = 40 A
VCEsat
1.6
1.85
2.1
V
VGE = 15 V, IC = 40 A, TJ = 150°C
2.3
Gateemitter threshold voltage
VGE = VCE, IC = 200 mA
VGE(th)
4.5
5.5
6.5
V
Collectoremitter cutoff current, gate
VGE = 0 V, VCE = 600 V
ICES
0.2
mA
emitter shortcircuited
VGE = 0 V, VCE = 600 V, TJ = 150°C
2
Gate leakage current, collectoremitter
shortcircuited
VGE = 20 V , VCE = 0 V
IGES
100
nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 20 V, VGE = 0 V, f = 1 MHz
VCE = 480 V, IC = 40 A, VGE = 15 V
Cies
Coes
Cres
Qg
Qge
Qgc
4200
pF
170
110
171
nC
36
83
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
Total switching loss
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
85
ns
37
174
73
0.89
mJ
0.44
1.33
82
ns
38
179
95
1.10
mJ
0.84
1.94
http://onsemi.com
2


Part Number 40N60FL
Description IGBT
Maker ON Semiconductor
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