40N60NPFDPN Datasheet | Silan

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES - 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A - Low conduction loss - Fast switching - High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55～+175 -55～+175 Packing Tube Units V V A A W W/C C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 6 SGT40N60NPFDPN_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (FRD) Thermal Resistance, Junction to Ambient Symbol RθJC RθJC RθJA Ratings 0.24 1.4 35.5 ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Breakdown Voltage C-E Leakage Current G-E Leakage Current G-E Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector...