Datasheet Summary
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5 ms Short- Circuit Capability
- These are Pb- Free Devices
Typical Applications
- Solar Inverters
- Uninterruptable Power Supply...
