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4N25M - Phototransistor Optocouplers

General Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6 pin dual in

line package.

Key Features

  • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:.
  • 10% for 4N27M and 4N28M.
  • 20% for 4N25M and 4N26M.
  • 100% for 4N35M and 4N36M and 4N37M.
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN.
  • EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Insulation Voltage.

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Datasheet Details

Part number 4N25M
Manufacturer onsemi
File Size 328.95 KB
Description Phototransistor Optocouplers
Datasheet download datasheet 4N25M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6-Pin General Purpose Phototransistor Optocouplers 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: ♦ 10% for 4N27M and 4N28M ♦ 20% for 4N25M and 4N26M ♦ 100% for 4N35M and 4N36M and 4N37M • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs DATA SHEET www.onsemi.