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  ON Semiconductor Electronic Components Datasheet  

5LN01C Datasheet

N-Channel Small Signal MOSFET

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Ordering number : EN6555C
5LN01C
N-Channel Small Signal MOSFET
50V, 0.1A, 7.8Ω, Single CP
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
50
±10
0.1
0.4
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9 0.1 5LN01C-TB-E
3 5LN01C-TB-H
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Ordering & Package Information
Device
Package
Shipping
5LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000pcs./
reel
memo
Pb-Free
5LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000pcs./
reel
Pb-Free
and
Halogen Free
Packing Type: TB
Marking
TB
Electrical Connection
3
YB
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002951/62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 No.6555-1/6


  ON Semiconductor Electronic Components Datasheet  

5LN01C Datasheet

N-Channel Small Signal MOSFET

No Preview Available !

5LN01C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0V
Switching Time Test Circuit
4V VIN
0V
VIN
PW=10μs
D.C.1%
G
VDD=25V
ID=50mA
RL=500Ω
D VOUT
5LN01C
P.G 50Ω S
min
50
Ratings
typ
0.4
0.13
0.18
6
7.1
10
6.6
4.7
1.7
18
42
190
105
1.57
0.20
0.32
0.85
max
1
±10
1.3
7.8
9.9
20
1.2
Unit
V
μA
μA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.6555-2/6


Part Number 5LN01C
Description N-Channel Small Signal MOSFET
Maker ON Semiconductor
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5LN01C Datasheet PDF






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