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  ON Semiconductor Electronic Components Datasheet  

5LP01S Datasheet

P-Channel Small Signal MOSFET

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Ordering number : EN6666B
5LP01S
P-Channel Small Signal MOSFET
–50V, –0.07A, 23Ω, Single SMCP
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--50
±10
--0.07
--0.28
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7027-004
1.6
0.4 0.8 0.4
5LP01S-TL-E
Product & Package Information
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
2
3
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SMCP
TL
Electrical Connection
3
XB
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/41006PE MSIM TB-00002192/D2000 TSIM TA-3075 No.6666-1/7


  ON Semiconductor Electronic Components Datasheet  

5LP01S Datasheet

P-Channel Small Signal MOSFET

No Preview Available !

5LP01S
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specied Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
IS= --70mA, VGS=0V
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --25V
ID= --40mA
RL=625Ω
D VOUT
5LP01S
P.G 50Ω S
min
--50
Ratings
typ
--0.4
70
100
18
20
30
7.4
4.2
1.3
20
35
160
150
1.40
0.16
0.23
--0.85
max
--1
±10
--1.4
23
28
60
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
5LP01S-TL-E
Package
SMCP
Shipping
3,000pcs./reel
memo
Pb Free
No.6666-2/7


Part Number 5LP01S
Description P-Channel Small Signal MOSFET
Maker ON Semiconductor
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5LP01S Datasheet PDF






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