* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A
* 100% of the Parts Tested for ILM (Note 2)
* High Input
AFGB30T65RQDN Datasheet (241.09 KB)
AFGB30T65RQDN
241.09 KB
Igbt.
IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum .
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