AFGB30T65RQDN Description
IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
AFGB30T65RQDN Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb-Free and RoHS pliant