AFGB30T65SQDN
AFGB30T65SQDN is IGBT manufactured by onsemi.
IGBT for Automotive Applications
650 V, 30 A, D2PAK
Features
- Maximum Junction Temperature: TJ = 175°C
- High Speed Switching Series
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Low VF Soft Recovery Co- packaged Diode
- AEC- Q101 Qualified
- 100% of the Parts are Dynamically Tested (Note 1)
Typical Applications
- Automotive On Board Charger
- Automotive DC/DC Converter for HEV
MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 2) Diode Forward Current (TC = 25°C) Diode Forward Current (TC = 100°C) Pulsed Diode Maximum Forward Current (Note 2)
VCES
VGES
±20
VGES
±30
Maximum Power Dissipation (TC = 25°C)
Maximum Power Dissipation (TC = 100°C)
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to °C +175
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 100 W, Inductive Load 2. Repetitive rating: pulse width limited by max. Junction temperature 3. Surface- mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 4. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
BVCES 650 V
DATA SHEET .onsemi.
VCE(sat) TYP 1.6...
