AFGB30T65SQDN Description
IGBT for Automotive Applications 650 V, 30 A, D2PAK AFGB30T65SQDN.
AFGB30T65SQDN Key Features
- Maximum Junction Temperature: TJ = 175°C
- High Speed Switching Series
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Low VF Soft Recovery Co-packaged Diode
- AEC-Q101 Qualified
- 100% of the Parts are Dynamically Tested (Note 1)