AFGB30T65RQDN
AFGB30T65RQDN is IGBT manufactured by onsemi.
IGBT for Automotive Applications
650 V, 30 A
Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb- Free and Ro HS pliant
Typical Applications
- E- pressor for HEV/EV
- PTC Heater for HEV/EV
DATA SHEET .onsemi.
BVCES 650 V
VCE(sat) TYP 1.58 V
IC 30 A
E D2PAK 3 LEAD
CASE 418AJ
MARKING DIAGRAM
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