AFGHL25T120RHD - IGBT

onsemi

General Description

This Insulated Gate Bipolar Transistor (IGBT)

Key Features

a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching.

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AFGHL25T120RHD igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	AFGHL25T120RHD
Manufacturer	onsemi
File Size	375.85 KB
Description	IGBT
Datasheet	AFGHL25T120RHD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.