AFGHL25T120RHD
Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction.
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature: TJ = 175°C
- Short Circuit Withstand Time 8 ms
- 100% of the Parts Tested for ILM (Note 2)
- Fast Switching
- Tighten Parameter Distribution
- AEC−Q101 Qualified and PPAP Capable
- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Applications
- Automotive HEV−EV e−pressor
