AFGHL25T120RHD Overview
Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature: TJ = 175°C
- Short Circuit Withstand Time 8 ms
- 100% of the Parts Tested for ILM (Note
- Fast Switching
- Tighten Parameter Distribution
- AEC-Q101 Qualified and PPAP Capable
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant
