Datasheet4U Logo Datasheet4U.com

AFGHL40T65SPD - IGBT

General Description

AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability.

Key Features

  • AEC.
  • Q101 Qualified.
  • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ. ) @ IC = 40 A.
  • 100% Of The Part Are Dynamically Tested (Note 1).
  • Short Circuit Ruggedness > 5 mS @ 25°C.
  • Maximum Junction Temperature: TJ = 175°C.
  • Fast Switching.
  • Tight Parameter Distribution.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • Co.
  • Packed With Soft And Fast Recovery Diode Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFGBG70T65SQ IGBT onsemi

Other Datasheets by onsemi

Part Number Description
AFGHL40T65SQ IGBT
AFGHL40T65SQD IGBT
AFGHL40T65RQDN IGBT
AFGHL40T120RHD IGBT
AFGHL25T120RHD IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. Features • AEC−Q101 Qualified • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.