Datasheet4U Logo Datasheet4U.com

AFGHL40T65SQD - IGBT

Datasheet Summary

Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Fast Switching.
  • Tight Parameter Distribution.
  • RoHS Compliant Typical.

📥 Download Datasheet

Datasheet preview – AFGHL40T65SQD
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. Features • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.
Published: |