AFGHL40T65SPD Description
Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.
AFGHL40T65SPD Key Features
- AEC-Q101 Qualified
- Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A
- 100% Of The Part Are Dynamically Tested (Note 1)
- Short Circuit Ruggedness > 5 mS @ 25°C
- Maximum Junction Temperature: TJ = 175°C
- Fast Switching
- Tight Parameter Distribution
- Positive Temperature Co-efficient for Easy Parallel Operating
- Co-Packed With Soft And Fast Recovery Diode