* AEC
* Q101 Qualified
* Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* Tight Parameter Distribution
* High In
AFGY120T65SPD Datasheet (350.10 KB)
AFGY120T65SPD
350.10 KB
Igbt.
Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction.
📁 Related Datasheet
AFGY120T65SPD-B4 IGBT (ON Semiconductor)
AFGY100T65SPD IGBT (ON Semiconductor)
AFGY160T65SPD-B4 IGBT (ON Semiconductor)
AFGB20N60SFD-BW IGBT (ON Semiconductor)
AFGB30T65RQDN IGBT (ON Semiconductor)
AFGB30T65SQDN IGBT (ON Semiconductor)
AFGB40T65RQDN IGBT (ON Semiconductor)
AFGB40T65SQDN IGBT (ON Semiconductor)
AFGBG70T65SQ IGBT (onsemi)
AFGHL25T120RHD IGBT (ON Semiconductor)
