• Part: AFGY120T65SPD
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 350.10 KB
Download AFGY120T65SPD Datasheet PDF
onsemi
AFGY120T65SPD
Features - AEC- Q101 Qualified - Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co- efficient for Easy Parallel Operating - Tight Parameter Distribution - High Input Impedance - 100% of the Parts are Tested for ILM - Short Circuit Ruggedness - Co- packed with Soft Fast Recovery Diode Typical Applications - Traction Inverter for HEV/EV - Auxiliary DC/AC Converters - Motor Drives - Other Power- Train Applications Requiring High Power Switch MAXIMUM RATINGS Rating Symbol Value Unit Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage VCES VGES ±20 ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Collector Current Pulsed Collector Current Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Short Circuit Withstand Time @ TC = 25°C Voltage Transient Ruggedness...