Datasheet4U Logo Datasheet4U.com

AFGY120T65SPD - IGBT

Features

  • AEC.
  • Q101 Qualified.
  • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 120 A.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Tested for ILM.
  • Short Circuit Ruggedness.
  • Co.
  • packed with Soft Fast Recovery Diode Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFGBG70T65SQ IGBT onsemi

Other Datasheets by onsemi

Part Number Description
AFGY120T65SPD-B4 IGBT
AFGY100T65SPD IGBT
AFGY160T65SPD-B4 IGBT
AFGB20N60SFD-BW IGBT
AFGB30T65RQDN IGBT

Full PDF Text Transcription

Click to expand full text
Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing. Features • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.
Published: |