AFGY120T65SPD-B4 Description
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A AFGY120T65SPD-B4.
AFGY120T65SPD-B4 Key Features
- AEC-Q101 Qualified and PPAP Capable
- Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-Efficient
- Tight Parameter Distribution
- High Input Impedance
- 100% of the Parts are Dynamically Tested
- Short Circuit Ruggedness > 6 ms @ 25°C
- Copacked with Soft, Fast Recovery Extremefast Diode
- This Device is Pb-Free, Halogen Free/BFR Free and are RoHS