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AFGY120T65SPD-B4 Datasheet IGBT

Manufacturer: onsemi

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Overview

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120.

Key Features

  • AEC.
  • Q101 Qualified and PPAP Capable.
  • Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ. ) @ IC = 120 A.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • Efficient.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Ruggedness > 6 ms @ 25°C.
  • Copacked with Soft, Fast Recovery Extremefast Diode.
  • This Device is Pb.

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