AFGY100T65SPD Datasheet IGBT

Manufacturer: onsemi

AFGY100T65SPD igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	AFGY100T65SPD
Manufacturer	onsemi
File Size	349.37 KB
Description	IGBT
Datasheet	AFGY100T65SPD Datasheet

Overview

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI.

Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing.

Key Features

AEC.
Q101 Qualified.
Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 100 A.
Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Tested for ILM.
Short Circuit Ruggedness.
Co.
packed with Soft Fast Recovery Diode Typical.

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