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AFGY100T65SPD Datasheet

Manufacturer: onsemi
AFGY100T65SPD datasheet preview

Datasheet Details

Part number AFGY100T65SPD
Datasheet AFGY100T65SPD-ONSemiconductor.pdf
File Size 349.37 KB
Manufacturer onsemi
Description IGBT
AFGY100T65SPD page 2 AFGY100T65SPD page 3

AFGY100T65SPD Overview

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing.

AFGY100T65SPD Key Features

  • AEC-Q101 Qualified
  • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 100 A
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Tight Parameter Distribution
  • High Input Impedance
  • 100% of the Parts are Tested for ILM
  • Short Circuit Ruggedness
  • Co-packed with Soft Fast Recovery Diode
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